Temperature and pressure-induced valence transitions in YbNi2Ge2 and YbPd2Si2
نویسندگان
چکیده
Hitoshi Yamaoka,1 Ignace Jarrige,2 Naohito Tsujii,3 Jung-Fu Lin,4 Nozomu Hiraoka,5 Hirofumi Ishii,5 and Ku-Ding Tsuei5 1Harima Institute, The Institute of Physical and Chemical Research (RIKEN), Sayo, Hyogo 679-5148, Japan 2Synchrotron Radiation Research Unit, Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo, Hyogo 679-5148, Japan 3Quantum Beam Center, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Japan 4Department of Geological Sciences, Jackson School of Geosciences, The University of Texas at Austin, Austin, Texas 78712, USA 5National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan Received 4 February 2010; revised manuscript received 20 April 2010; published 15 July 2010
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